logo

PD84006-E Datasheet, ST Microelectronics

PD84006-E transistor equivalent, rf power transistor.

PD84006-E Avg. rating / M : 1.0 rating-12

datasheet Download

PD84006-E Datasheet

Features and benefits


*
*
*
*
*
* Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package .

Application

It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliabi.

Description

ription The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, lin.

Image gallery

PD84006-E Page 1 PD84006-E Page 2 PD84006-E Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts